Donor-induced performance tuning of amorphous SrTiO3 memristive nanodevices: Multistate resistive switching and mechanical tunability

H Nili; S Walia; AE Kandjani; R Ramanathan; P Gutruf; T Ahmed; S Balendhran; V Bansal; DB Strukov; O Kavehei; M Bhaskaran; S Sriram

Journal article

Donor-induced performance tuning of amorphous SrTiO3 memristive nanodevices: Multistate resistive switching and mechanical tunability

H Nili, S Walia, AE Kandjani, R Ramanathan, P Gutruf, T Ahmed, S Balendhran, V Bansal, DB Strukov, O Kavehei, M Bhaskaran, S Sriram

Advanced Functional Materials | WILEY-V C H VERLAG GMBH | Published : 2015

DOI: 10.1002/adfm.201501019

Abstract

Metal-oxide valence-change memristive devices are the key contenders for the development of multilevel nonvolatile analog memories and neuromorphic computing architectures. Reliable low energy performance and tunability of nonlinear resistive switching dynamics are essential to streamline the high-density circuit level integration of these devices. Here, manipulation of room temperature-synthesized defect chemistry is employed to enhance and tune the switching characteristics of high-performance amorphous SrTiO3 (a-STO) memristors. Substitutional donor (Nb) doping with low concentrations in the a-STO oxide structure allows extensive improvements in energy requirements, stability, and control..

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University of Melbourne Researchers

Shiva Balendhran Author

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Grants

Awarded by Australian Research Council

Funding Acknowledgements

The authors acknowledge the Australian Research Council for funding in the form of projects (DP130100062 and DP140103448), fellowship (DP1092717 and DP110100262), and infrastructure (LE0882246, LE0989615, and LE110100223) support. The authors acknowledge the support of the RMIT Microscopy and Microanalysis Facility and the Melbourne Centre for Nanofabrication.